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Phosphorene Nanodevice for Ultrafast Energy Harvesting and Next Generation Electronics
Phosphorene Nanodevice for Ultrafast Energy Harvesting and Next Generation Electronics
Friday, February 17, 2017
Exhibit Hall (Hynes Convention Center)
Transition metal dichalcogenides (TMDCs) have recently shown much promise as thin layer semiconductors in application to field effect transistor technology. As n-type materials in heterostructures, TMDCs provide a unique vantage point for studying the properties of graphene analogous phosphorene. Phosphorene-TMDC heterostructure nanodevices have remained largely unexplored due to the lack of air stability observed in samples of black phosphorus under both ambient and dry vacuumed conditions. Few-layer phosphorene represents much promise as a p-type material because of its demonstrated high mobility and tunable band gap. A heterojunction was synthesized via dry transfer methods using MoS2 and WS2 alternatingly. Microscopy, Raman spectroscopy, transport, and photocurrent response techniques were employed to characterize the device physically and electronically. A novel method for air stable phosphorene was tested over longer periods of time using an extended contact in heterostructure context, with highly promising results. Results indicate a promising heterojunction with high speed energy harvesting and photovoltaic properties. Potential applications include next generation electronic devices, photodetectors, energy storage devices, and photovoltaic cells.